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BU, BU NPN Power Transistors. These devices are high voltage, high speed transistors for horizontal. V EBO 6 Vdc. Base Current. I CM 15 Adc. Operating and Storage Junction.
Temperature Storage. Stresses exceeding those listed in the Maximum Ratings table may damage the. If any of these limits are exceeded, device functionality should not be.
Maximum Lead Temperature for Soldering. CASE A. STYLE 1. AY WW. Publication Order Number:. Min Typ Max. Collector Cutoff Current. I CES.
Emitter Cutoff Current. I EBO. Forward Diode Voltage. Output Capacitance. Inductive Load Crossover Time. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Figure 1. DC Current Gain. Figure 2. Maximum Rated Forward. Bias Safe Operating Area. Download BU Datasheet. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Isc Silicon NPN Power Transistor
BU407 Transistors. Datasheet pdf. Equivalent